Doped semiconductor nanocrystals

ABSTRACT

A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.

FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

The subject matter of this application was in part funded by theNational Science Foundation (Grant No. DMR-9731642). The government mayhave certain rights in this invention.

BACKGROUND

The present invention relates to semiconductor nanocrystals.

Semiconductor nanocrystals are very small crystallites of semiconductormaterial, also known as quantum dots, which have the opto-electronicproperties of semiconductors. They are typically prepared as colloids,and as such, display physico-chemical properties of molecules.

A striking feature of semiconductor nanocrystals is that their color maybe controlled by their size. This is a direct consequence of quantumconfinement on the electronic states, giving these nanocrystals greatpotential in systems, such as light emitting diodes, photovoltaic cellsand future nanoelectronic devices. For these and other applications, itwould be desirable to control the electron occupation of thenanocrystals, in the same manner as n- and p-type doping is used tocontrol the electron occupation in bulk semiconductors.

Attempts to dope semiconductor nanocrystals by introducing impurityatoms, as is typically done with bulk semiconductors, have beenunsuccessful. Impurities tend to be expelled from the small crystallinecores. Furthermore, thermal ionization of the impurities to provide freecarriers in the nanocrystals is hindered by the strong confinement thatresults from the small size of the nanocrystals. Finally, some attemptsat doping have resulted in charge being trapped in surface states, notin the quantum-confined states of the nanocrystals.

BRIEF SUMMARY

In a first aspect, the present invention is a particle, including asemiconductor nanocrystal. The nanocrystal is doped.

In a second aspect, the present invention is a method of making aparticle, including adding at least one carrier to a semiconductornanocrystal, to form a doped semiconductor nanocrystal.

In a third aspect, the present invention is a film including dopedsemiconductor nanocrystals.

In a fourth aspect, the present invention is a colloid including dopedsemiconductor nanocrystals.

In a fifth aspect, the present invention is a display including dopedsemiconductor nanocrystals.

In a sixth aspect, the present invention is an opto-electronic deviceincluding doped semiconductor nanocrystals.

In a seventh aspect, the present invention is an n-p junction includingdoped semiconductor nanocrystals.

Definitions

The term “doped” means that the nanocrystal contains at least one addedcarrier, either one or more electrons or one or more holes, inquantum-confined states.

The term “dopant” means the added carrier or carriers in a dopedsemiconductor nanocrystal.

The term “n-doped” means that the added carrier or carriers areelectrons.

The term “p-doped” means that the added carrier or carriers are holes.

The term “semiconductor” means a material that is semiconducting, asopposed to metallic. Examples of semiconductors include carbon (in thediamond structure), silicon, germanium, and mixtures thereof; titaniumdioxide, aluminum oxide; 2-6 semiconductors, which are compounds of atleast one divalent metal (zinc, cadmium, mercury and lead) and at leastone divalent non-metal (oxygen, sulfur, selenium, and telurium) such aszinc oxide, cadmium selenide, cadmium sulfide, mercury selenide, andmixtures thereof; and 3-5 semiconductors, which are compounds of atleast one trivalent metal (aluminum, gallium, indium, and thalium) withat least one trivalent non-metal (nitrogen, phosphorous, arsenic, andantimony) such as gallium arsenide, indium phosphide, and mixturesthereof.

The term “nanocrystal” means a particle having an average diameter, asdetermined by transmission electron microscopy, of 1 to 100 nm,preferably 2 to 50 nm, more preferably 2 to 30 nm.

BRIEF DESCRIPTION OF THE DRAWINGS

Various other objects, features and attendant advantages of the presentinvention will be more fully appreciated as the same becomes betterunderstood from the following detailed description when considered inconnection with the accompanying drawings in which like referencecharacters designate like or corresponding parts throughout the severalviews and wherein:

FIG. 1. Absorption spectra of CdSe nanocrystals before (dotted line),immediately after (solid line), and 27 hours after (dashed line) theaddition of sodium biphenyl reagent.

FIG. 2. Experimental 1S_(e)-1P_(e) transition energy of n-type CdSenanocrystals capped with TOPO (filled circles), optically excitednanocrystals (open triangles) and effective mass calculation³ (solidline). The filled diamonds are the same transition energy for n-typeCdSe nanocrystals with various capping groups as indicated. The IRabsorption band is easily tuned with size and its position can bereadily determined from bulk properties.

FIG. 3. IR absorption spectra of n-type ZnO (4.4 nm), CdS (7 nm), andCdSe (5.4 nm) nanocrystals. The insets are the corresponding timeevolution of the IR absorbance maximum normalized for comparison. Notethat the x-axis of the inset for ZnO is in hours.

FIG. 4. IR and UV/VIS spectra at different potentials of (a) 5.4 nm CdSenanocrystals, and (b) 7.0 nm CdSe nanocrystals.

FIG. 5. 1S_(e)-1P_(e) IR absorbance at 2200 cm⁻of 5.4 nm CdSenanocrystals. The absorption is turned on by applying −1.5 V ofpotential on the nanocrystals, and turned off by resetting the potentialto 0 V. The points marked with “on” and “off” are those at which thepotential is set to −1.5 V and reset to 0 V, respectively.

DETAILED DESCRIPTION

The present invention includes doped semiconductor nanocrystals. Thesenanocrystals contain carriers in quantum-confined states, rather thancarriers trapped in surface states. They may be formed by a variety ofmethods, including reduction or oxidation by chemical agents, orelectrochemically. Once formed, they display unexpected properties, suchas quenched fluorescence with the inclusion of as few as one or twocarriers.

Semiconductor nanocrystals have been know for many years, and thepreparation of these material is described in C. B. Murray, C. R. Kagan,and M. G. Bawendi, Annu. Rev. Mater. Sci. 30, 545 (2000); C. B. Murray,D. J. Norris, and M. G. Bawendi, J. Am. Chem. Soc. 115, 8706 (1993); andJ. E. Bowen Katari, V. L. Colvin, and A. P. Alivisatos, J. Phys. Chem.98, 4109 (1994). Preferably, they are prepared as colloids. In the formof colloids, they are easily manipulated. The colloids may be mixed witha solvent including non-polar and polar organic solvents, such asalkanes (for example, hexane and pentane), ethers (diethyl ether andtetrahydrofuran), benzene, toluene, styrene, dichloromethane, styrene,xylene, dimethyl formamide (DMF), carbonates (propylene carbonate),dimethyl sulfoxide (DMSO), and mixtures thereof.

Semiconductor nanocrystals may be formed as mixtures with a core-shellstructure. In this form a first composition will form the core (forexample, CdSe), and this core will be surrounded by a shell of a secondcomposition (for example ZnS). The preparation of these material isdescribed in M. A. Hines and P. Guyot-Sionnest, J. Phys. Chem. 100, 468(1996). Examples include core/shell pairs CdSe/ZnS, CdSe/CdS, InAs/CdSe,InAs/InP, ZnS/CdSe, CdS/CdSe, CdSe/InAs and InP/As.

Semiconductor nanocrystals may be formed with capping groups on theirsurfaces. Capping groups are moieties that are attached to the surfaceof the semiconductor nanocrystals, and are included during the synthesisof colloidal nanocrystals. Examples of capping groups include phosphineoxides, such as trioctylphosphine oxide (TOPO), and thiolates, such aspropane thiolate. Capping groups also include charged capping groups,such as trimethyl ammonium propane thiolate, and ion sequesteringcapping groups, such as crown ether thiolates, for example2-[(6-mercaptohexyl)oxy]methyl-12-crown-4. When a crown ether thiolatehas sequestered an ion, for example a sodium ion, then it would be acharged capping group. Using these ion sequestering capping groups thatcan bind to cations or anions, added Coulomb interaction between thedoped semiconductor nanocrystal and its counter ion may lead to improvedstability. Such molecules have demonstrated selective adsorption ofalkali cations, as described in S. Flink et al J. Phys. Chem. B 1999,103, 6515.

An advantageous properties of semiconductor nanocrystals prepared ascolloids is the capping group. The readily exchangeable capping groupallows for a versatile manipulation of nanocrystals in many differentenvironments. Recapping nanocrystals with organic functional groups thatare compatible with physiological environments has shown thatnanocrystals can be useful biological tags, as described in Bruchez Jr.,M., Moronne, M., Gin, P., Weiss, S. & Alivisatos, A. P. Science 281,2013-2016 (1998); and Chan, W. C. W. & Nie, S. Science 281, 2016-2018(1998). The electron injection into the 1S_(e) state is also achieved innanocrystals with different capping groups, as indicated in FIG. 2.Preferably, the capping layer does not introduce electron traps withinthe band gap. The capping layer also provides an avenue to improve thelong-term stability of an n-doped nanocrystal.

Films of semiconductor nanocrystals may be prepared, for example, byapplying colloidal semiconductor nanocrystals in a solvent onto asurface, and evaporating the solvent. The surface may be the surface ofany substrate, such as a glass, quartz, a metal, a plastic (for examplea transparent polymer), a ceramic, or even a natural material (forexample, wood).

The semiconductor nanocrystal may also be formed into a compositematerial. A composite of semiconductor nanocrystals with a polymer maybe formed by using a liquid monomer as a solvent for colloidalsemiconductor nanocrystals, and then polymerizing the monomer, asdescribed in Lee J, et al., “Full Color Emission From II-VISemiconductor Quantum Dot-Polymer Composites” Adv. Mater. 12, 1102,2000. For example, styrene could be used as the solvent for colloidalsemiconductor nanocrystals, and then the styrene may be polymerized bythe addition of benzyl peroxide; the resulting composite would besemiconductor nanocrystals in a matrix of polystyrene. By selectingappropriate monomers and monomer mixtures, an enormous variety ofcomposites of semiconductor nanocrystals and polymers or copolymers,including electrically conductive polymers or copolymers, are possible.Alternatively, composites may be formed by dissolving the semiconductornanocrystals in a solvent containing a disolved polymer and drying themixture.

Once formed, the semiconductor nanocrystals may be doped. A variety ofmethods may be used to dope the semiconductor nanocrystals, includingchemical doping, electrochemical doping, and doping by light inducedelectron transfer.

Chemical doping may be carried out by contacting the semiconductornanocrystal to a reducing agent or an oxidizing agent. For example,exposing the semiconductor nanocrystals to sodium metal, as a reducingagent, will form n-doped semiconductor nanocrystals. Examples ofreducing agents include metals such as lithium, sodium, potassium,rubidium, cesium, calcium, strontium, barium, aluminum, amalgams andalloys containing these metals. Exposing semiconductor nanocrystals toan oxidizing agent may form p-doped semiconductor nanocrystals. Examplesof oxidizing agents include halogens, such as chlorine, bromine andiodine; and compounds such as molybdenum hexafluoride, silver difluorideand ferric chloride. Optionally, a charge shuttle may be included, toimprove the rate at which doping takes place; examples of chargeshuttles include biphenyl, naphthalene, and anthracene.

Electrochemical doping may be carried out by forming a mixture of asolvent and colloidal semiconductor nanocrystals, together with anelectrolyte. A working electrode and counter electrode are placed inelectrical contact with the mixture, preferably also with a referenceelectrode, and a voltage is applied across the working and counterelectrodes. The voltage is selected as necessary to dope (eithern-doping or p-doping) the semiconductor nanocrystals, and the reactionmay be monitored spectroscopically. Solvents are chosen that willsupport the colloidal semiconductor nanocrystals and that will dissolvethe electrolyte; examples include tetrahydrofuran (THF), dimethylformamide (DMF), carbonates such as propylene carbonate, dimethylsulfoxide (DMSO), and mixtures thereof. Electrolytes must dissolve inthe chosen solvent, and include salts such as tetrabutylammoniumperchlorate (TBAP).

As a film, the semiconductor nanocrystals may be doped chemically, forexample by evaporation of sodium metal onto the film, orelectrochemically, for example when the film has been formed on anelectrically conducting substrate. Furthermore, once the semiconductornanocrystals have been doped, they may be formed into the film; forexample, a colloid of doped semiconductor nanocrystals in a hydrocarbonsolvent may be applied to a glass surface, and then the hydrocarbon isallowed to evaporate, forming a film of doped semiconductornanocrystals. A recent account on the preparation and properties ofsolid films of semiconductor nanocrystals that are not doped is given byMurray C B, Kagan C R, Bawendi M G, Synthesis and Characterization ofMonodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies, Annu.Rev. Mater. Sci. 30: 545-610 2000. The same procedures are applicable ton- or p-doped colloidal semiconductor nanocrystals.

A doped semiconductor nanocrystal will have a carrier in aquantum-confined state. These are delocalized states, in contrast to asemiconductor nanocrystal that includes an electron or hole in a trappedstate, typically a surface state; such a particle is not doped. Infrared(IR) spectroscopy may be used to determine if a carrier is in aquantum-confined state, by observation of an intraband transition, suchas the 1S_(e)-1P_(e) intraband transition.

Quantum-confined states are orbitals that are delocalized. When acarrier is in a quantum-confined state, the semiconductor nanocrystalwill exhibit a strong electrically allowed transition that does notappear in the corresponding semiconductor nanocrystal that is not doped.For example, in a corresponding semiconductor nanocrystal that is notdoped, electrons will fill all orbitals with an energy below andincluding the highest occupied quantum-confined orbital (HOQCO). Thenext highest energy orbital will be empty, the lowest unoccupiedquantum-confined orbital (LUQCO). Upon doping, with an electron as thedopant (forming an n-doped semiconductor nanocrystal), an electron willnow be present in the LUQCO. Using IR spectroscopy, this electron can bedetected by its transition from the LUQCO to the next highest orbital.

Similarly, if the dopant is a hole, a hole will now be present in theHOQCO, and using IR (far or mid IR) spectroscopy, this hole can bedetected by the transition of an electron from the next lowest orbitalto the HOQCO. Therefore, by comparing the IR spectrum of thesemiconductor nanocrystal that is not doped and the semiconductornanocrystal in an unknown condition, it can be determined if thesemiconductor nanocrystal in an unknown condition is doped.

When doped, the semiconductor nanocrystals will also exhibit a bleach ofthe exciton transition. However, this may also occur if the carriers arein trapped states. Furthermore, an intraband transition may also beobserved in photoexcited nanocrystals, as described in Guyot-Sionnest,P. & Hines, M. A. Appl. Phys. Lett. 72, 686-688 (1998); and Shim, M.,Shilov, S. V., Braiman, M. S. & Guyot-Sionnest, P. J. Phys. Chem. 104,1494-1496 (2000). However, these photoexcited semiconductor nanocrystalsare not doped, since the carriers present are not added, but rathergenerated internally as electron-hole pairs.

Photo doping (as opposed to photoexcitation) may also be done usingstaggered band-gap configuration in core-shell structure. Such astructure would naturally lead to charge separation afterphotoexcitation, and may improve the stability of n- or p-doped cores byproviding the countercharge in the shell (which would then be thecorresponding p- or n-doped). A graded interface may further improve thecharge separation. One example of such structure is core shell(CdSe)ZnTe nanocrystals, where the electron would be stabilized in thecore (an n-doped semiconductor nanocrysal) and the hole in the shell (ap-doped semiconductor nanocrystal). Core-shell semiconductor nanocrystalcolloids are easily synthesized, although the emphasis in the literaturehas been on semiconductor in the normal configuration, with the outsidematerial having a gap that extends above and below the inner gap toenhance luminescence rather than charge separation.

A staggered core/shell structure with a deep impurity level in the shellmay be a stable case of n- or p-doping of the core as an electron istransferred between the core and shell to accommodate the valency of theimpurity. This is similar to delta-doping used in current high speedelectronic systems, where the dopant is spatially removed from theactive layer (High-speed integrated circuits in A(3)B(5)-semiconductorcompound nanostructures, as described in a survey, Mokerov V G,Nalbandov B G, Shmelev S S, Amelin V P JOURNAL OF COMMUNICATIONSTECHNOLOGY AND ELECTRONICS, 44: (11) 1187-1197 November 1999).

An unexpected property of doped semiconductor nanocrystals is that theyexhibit quenched fluorescence with the inclusion of as few as one or twocarriers. Semiconductor nanocrystals are fluorescent, when undoped, andthis has been well studied, as described in Hines, M. A.;Guyot-Sionnest, P. J. Phys. Chem. 1996, 100, 468-471; Dabbousi, B. O.;Rodriguez-Viejo, J.; Mikulec, F. V.; Heine, J. R.; Mattoussi, H.; Ober,R.; Jensen, K. F.; Bawendi, M. G. J. Phys. Chem. B 1997, 101, 9463-9475;Peng, X. et al. J. Am. Chem. Soc. 1997, 119, 7019-7029; Cao, Y.; Banin,U. Angew. Chem. Int Ed. 1999, 38, 3692-3694; and Nirmal, M. et al.Nature 1996, 383, 802-804. Unexpectedly, doped semiconductornanocrystals lose this fluorescence with the inclusion of as few as oneor two carriers. This property may be used to make a variety of devices,for example a display.

A display may be made from a film of semiconductor nanocrystalssandwiched between transparent conductive surfaces, such as quartzcoated with indium-tin oxide. The conductive coatings are patterned asan addressable array, and as current is applied to parts of the film,electrochemical doping of the semiconductor nanocrystals will take placein that location, quenching fluorescence at that spot (or pixel) only.When this display is illuminated with ultra-violet light, the addressedlocations will appear dark; all others will glow. Since the color ofsemiconductor nanocrystals fluorescence is tunable by selection ofcomposition and nanocrystal size, a color display can be prepared.

Opto-electronic devices may also be prepared using these materials. Forexample, one or more semiconductor nanocrystals could be placed on anarray of electrodes. These semiconductor nanocrystals may be doped orundoped electrochemically. In the undoped form, they would befluorescent, in the doped form, they would not. In this way, they couldbe used as a memory array, with light used to detect the doped/undopedstate of the nanocrystals.

The appearance of the intraband transition, that may absorb veryspecific wavelengths of IR light, may also be used to create newdevices. For example, an object could be coated with doped semiconductornanocrystals; the object would then emit IR preferentially at thatwavelength. This would cause the object to appear cooler to an IRdetector than without such a coating, and could cause an observer tobelieve that a person is an inanimate object. Furthermore, usingelectrochemical doping, this effect could be electrically controlled. Ina similar fashion, filters for absorbing specific wavelengths of IRlight can be prepared from doped semiconductor nanocrystals, and again,these could be electrically controlled.

Doped semiconductor nanocrystal n-p junctions may be made. Reducing thediffusion rate of the ions can be achieved with a polymer electrolyte,for example polyethyleneoxide and molecular moieties that chelate ions,such as the crown ethers. Many conducting polymer electrolytes have beendeveloped for the lithium-ion battery, and the requirement for then-doped semiconductor nanocrystals being less stringent on the reductionpotential to be achieved, these electrolytes may be directly used. Arecent review on these polymer electrolytes is described in Meyer, Adv.Mater. 10, 439 (1998)). A composite of a polymer electrolyte and dopedsemiconductor nanocrystals, preferably n-doped semiconductornanocrystals, may be used in an n-p junction.

EXAMPLES

In FIG. 1, IR and visible absorption spectra of 5.2 nm CdSe nanocrystalsbefore (dotted line) and ˜1 minute after (solid line) the addition ofsodium biphenyl reagent are shown. Upon charge transfer, the first andthe second exciton peaks at 2.07 and 2.18 eV, respectively, are stronglybleached and broadened. Broadening is expected if there are charges thatcan shift the exciton energy by Stark effect and this can also lead toan apparent blue shift. Since the charges may reside in surface statesand/or in the delocalized 1S_(e) state, the changes in the visibleabsorption indicate that electron transfer possibly occurred but do notguarantee that the nanocrystals are n-doped. The true n-doped characterof the nanocrystals is unambiguously confirmed by the appearance of the1S_(e)-1P_(e) IR absorption arising at 0.3 eV.

The long-tern stability of the n-type nanocrystals is strongly affectedby the presence of water impurity or exposure to air, and as discussedbelow, the decay is likely due to further oxidation and decomposition.With our CdSe sample preparation, the IR absorption decays within 30minutes to 24 hours (from the smallest to the largest sizes,respectively). If the solution of nanocrystals and biphenyl anions isintentionally exposed to air, decay occurs within minutes. The durationof the IR absorption also depends on the dryness of the solvent. Morehygroscopic solvents such as ethers tend to give faster decay of the IRabsorption seen in n-type nanocrystals. The stability of the n-typenanocrystals is also strongly temperature dependent since at 20 K thesamples appear to be stable indefinitely (in excess of five weeks).Several hours to days after the complete decay of the IR absorption,there is a recovery of the optical bleach. After recovery, thenanocrystals are of smaller sizes as indicated by the blue-shift of theoptical absorption features shown in FIG. 1 (dashed line). Theblue-shift from 2.07 to 2.08 eV corresponds to a reduction in size of ˜2Å in diameter. Note that the IR absorption and the optical bleach can be“turned on” again by the addition of more sodium biphenyl reagent.

If no excess capping molecules are present in the solution, a slowprecipitation of the nanocrystals occurs. TOPO present in solutionprevents this slow precipitation. Since the reduction potential ofCd/Cd²⁺ is −0.403 V vs. SHE, near or below the position of the lowestquantum-confined state of CdSe nanocrystals, the most likely pathway forthe decomposition of n-type CdSe nanocrystals is via oxidation with lossof electrons in Cd/TOPO complexes in solution. As expected, smallern-type nanocrystals with larger degrees of confinement are less stable.Determining which systems can be made n-type by the electron transfermethod and the thermodynamic stability of the n-type nanocrystals maysimply be approached by looking at the reduction potential of thenanocrystals and of the constituent elements. For example, n-type ZnSenanocrystals may be less stable since the reduction potential of Zn/Zn²⁺is −0.762 V vs. SHE while the conduction band minimum of bulk ZnSe isnear −1.5 V vs. SHE¹⁰. On the other hand, ZnO, with its valence bandminimum near the reduction potential of hydrogen¹⁰, should be anexcellent candidate. In fact, charge transfer to ZnO nanocrystal hasbeen previously investigated by electrochemistry but the UV-visibleoptical spectra could not distinguish between electron transfer to trapstates or to the LUQCO.

FIG. 3 shows the IR absorption spectra of n-type ZnO, CdS, and CdSenanocrystals prepared by the electron transfer method. The bleach andthe blue-shift of the band edge absorption are observed in all threetypes of nanocrystals. The relatively broader IR absorption band of ZnOmay be attributed to a larger size distribution (σ˜25%) as well as to astronger electron-phonon interaction. The insets of FIG. 3 are thecorresponding time evolution of the maximum IR absorbance. As expectedfrom the relative reduction potentials of the semiconductor and of theconstituent elements, n-type ZnO nanocrystals are more stable than CdSand CdSe. At room temperature, approximately 30% of the initial IRabsorption is observed 5 days after the initial preparation of n-typeZnO nanocrystals, whereas the IR absorption completely decays in lessthan 2 days for both CdS and CdSe nanocrystals. The intrinsic limit ofthis electron injection method should be the point at which the sum ofthe confinement energy, the charging energy and the position of theconduction band minimum reaches the reduction potential of the reducingspecies.

Preparation of n-doped Nanocrystals.

To 0.3 ml of dried and deaerated solution of semiconductor nanocrystalswith a small amount of TOPO (<5 mg/ml) in2,2,4,4,6,8,8-heptamethylnonane, ˜10 to 50 μl of 1.2 M sodium biphenylis added. The concentrations of nanocrystals are such that the opticaldensity of the sample at the first exciton maximum is between 0.5 and1.5 for 200 μm path length. Samples are prepared and filled into a cellin the absence of oxygen and closed in a N₂ filled glove box.

Optical Measurements.

PL (photoluminescence) spectra are measured with Perkin Elmer LS 50 Bluminescence spectrometer. IR spectra are obtained with Nicolet Magna560 FTIR spectrometer. Ultra-violet/visible (UV/VIS) spectra areobtained with HP 8453 photodiode array spectrometer. All measurementsare carried out at room temperature. The cell is made of one CaF₂ windowand a sapphire window separated by a teflon spacer, and is capped withteflon stopcocks. For all experiments discussed herein, samples arebrought out of the glove box after capping and left standing in ambientconditions during and in between measurements. While the cell issolvent-tight, long exposure to air causes oxidation of the samples.

CdSe Nanocrystals

Colloidal nanocrystals of CdSe having trioctylphosphine oxide (TOPO)capping groups on the surface, are prepared similarly as methodsdescribed in C. B. Murray, D. J. Norris, and M. G. Bawendi, J. Am. Chem.Soc. 115, 8706 (1993); and J. E. Bowen Katari, V. L. Colvin, and A. P.Alivisatos, J. Phys. Chem. 98, 4109 (1994). To 12 g of degassed TOPO, asolution of dimethylcadmium (CdMe₂) and trioctylphosphine selenide(TOPSe) in trioctylphosphine (TOP) is quickly injected at about 350° C.The Cd/Se

solution is prepared in an inert atmosphere by diluting 0.7 ml of CdMe₂and 0.5 ml of TOPSe (both are 1 M solution in TOP) with 6 ml of TOP. Thegrowth temperature is 270° C. and the growth time is varied depending onthe desired size. The growth of nanocrystals is monitored by UV/VISabsorption spectra. For large nanocrystals (core diameter >50 Å),additional injection of Cd/Se reagent may be necessary if initial growthceases. The reaction is stopped when the absorption spectrum correspondsto that of desired size range. Upon cooling to ambient temperature, thereaction mixture is purified and size-selectively precipitated withanhydrous CHCl₃/MeOH resulting in CdSe nanocrystals of nearlymonodisperse sizes (5-10% size dispersion).

CdSe/ZnS Core/Shell Nanocrystals

Core/shell nanocrystals of CdSe/ZnS having TOPO capping groups areprepared by a two-step method described in M. A. Hines and P.Guyot-Sionnest, J. Phys. Chem. 100, 468 (1996). The preparation of theCdSe core is described above. When the desired core size is achieved,the temperature is lowered to 200° C. and a solution of diethylzinc(ZnEt₂) and bis(trimethylsilyl)sulfide ((TMS)₂S) in TOP is slowlyinjected into the reaction mixture. The amount of ZnEt₂ and (TMS)₂Sdepends on the initial size of CdSe core and desired thickness of ZnSshell. The reaction mixture is cooled to 90° C. immediately after theinjection of Zn/S is finished. The nanocrystals are allowed to grow at90° C. before the reaction is stopped. Upon cooling to ambienttemperature, the reaction mixture is purified and size-selectivelyprecipitated with anhydrous CHCl₃/MeOH resulting in CdSe/ZnS core/shellnanocrystals. Colloidal nanocrystals of CdSe were made in a similarmanner as described in Murray, C. B.; Norris, D. J.; Bawendi, M. G. J.Am. Chem. Soc. 1993, 115, 8706-8715. (CdSe)ZnS (core)shell nanocrystalsare prepared by the methods described in Hines, M. A.; Guyot-Sionnest,P. J. Phys. Chem. 1996, 100, 468-471; and Dabbousi, B. O.Rodriguez-Viejo, J.; Mikulec, F. V.; Heine, J. R.; Mattoussi, H.; Ober,R.; Jensen, K. F.; Bawendi, M. G. J. Phys. Chem. B 1997, 101, 9463-9475.

Spectroelectrochemical Investigations of Nanocrystals

UV/VIS absorption spectra were recorded using an Ocean Optics ST2000Triple Fiber Optic Spectrometer. Fourier transformed infrared (FTIR)spectra were measured with a Nicolet 550 FTIR spectrometer. Thepotential is controlled with an Intertech Systems PGS-151 potentiostat.All nanocrystals are precipitated out with MeOH and dried under vacuumfor a minimum of 45 minutes. The nanocrystals are then dissolved in a0.1 M solution of tetrabutylammonium perchlorate (TBAP) in anhydroustetrahydrofuran (THF). The concentrations of nanocrystals are such thatthe optical density of the sample at the first exciton maximum isbetween 1.0 and 2.0 for ˜500 μm path length. TBAP is used as thesupporting electrolyte and dried at 100° C. under vacuum for at least 12hours prior to use. THF is purified and dried by distillation oversodium. All measurements are carried out under inert atmosphere in anair-tight spectroelectrochemical cell similar to the one described in R.E. Wittrig, and C. P. Kubiak, J. Electroanal. Chem. 393, 75 (1995). Thethree-electrode system includes a Pt working electrode, a Pt wirecounter electrode, and an Ag wire pseudo-reference electrode. Thespectroelectrochemical cell is cleaned and dried under vacuum for 45minutes before use. The nanocrystal solutions are transferred into thecell under an inert atmosphere. The spectroelectrochemical cell iscalibrated using a standard solution of 1 mM ferrocene/0.1 M TBAP inTHF. The Ag pseudo-reference electrode was found to be offset about 0.1V with respect to Standard Hydrogen Electrode. All the potential valuesreported herein are with respect to the Ag pseudo-reference electrode.

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

1. A particle, comprising: a semiconductor nanocrystal, wherein saidnanocrystal is doped with an electron, such that the electron is in aquantum confined state at room temperature and in the absence of anapplied electric potential.
 2. The particle of claim 1, wherein saidnanocrystal is n-doped.
 3. The particle of claim 2, wherein saidnanocrystal comprises a 2-6 semiconductor compound.
 4. The particle ofclaim 3, wherein said nanocrystal is selected from the group consistingof zinc oxide, cadmium sulfide and cadmium selenide.
 5. A colloid,comprising a plurality of the particles of claim
 1. 6. A film,comprising a plurality of the particles of claim
 1. 7. The particle ofclaim 1, further comprising capping groups, on the surface of saidnanocrystal.
 8. A film, comprising a plurality of the particles of claim3.
 9. A method of making a particle, comprising: adding at least oneelectron to a semiconductor nanocrystal, to form a doped semiconductornanocrystal; wherein said electron is in a quantum confined state atroom temperature and in the absence of an applied electric potential.10. The method of claim 9, wherein said adding comprises contacting saidsemiconductor nanocrystal with a reducing agent.
 11. The method of claim9, wherein said adding comprises reducing electrochemically.
 12. Themethod of claim 9, wherein said nanocrystal comprises a 2-6semiconductor compound.
 13. The method of claim 12, wherein saidnanocrystal is selected from the group consisting of zinc oxide, cadmiumsulfide and cadmium selenide.
 14. A method of making a colloid,comprising making a plurality of the particles by the method of claim 9.15. A method of making a film, comprising: forming a colloid by themethod of claim 14, and applying said colloid to a surface.
 16. Themethod of claim 9, wherein said particle comprises capping groups, onthe surface of said nanocrystal.
 17. The method of claim 10, whereinsaid semiconductor nanocrystal is in a film comprising a plurality ofsemiconductor nanocrysals.
 18. A product, prepared by the method ofclaim
 9. 19. A product, prepared by the method of claim
 10. 20. Aproduct, prepared by the method of claim
 11. 21. A product, prepared bythe method of claim
 12. 22. A product, prepared by the method of claim14.
 23. A product, prepared by the method of claim
 15. 24. A product,prepared by the method of claim
 17. 25. A display, comprising aplurality of the particles of claim
 1. 26. An opto-electronic device,comprising a plurality of the particles of claim
 1. 27. Theopto-electronic device of claim 26, wherein said device is a memoryarray.
 28. A method of making an object appear cooler or warmer to an IRdetector, comprising coating said object with a plurality of theparticles of claim
 1. 29. An n-p junction, comprising a plurality of theparticles of claim
 1. 30. The n-p junction of claim 29, furthercomprising a polymer electrolyte.
 31. The particle of claim 4, furthercomprising trioctylphosphine oxide capping groups on a surface of saidnanocrystal.
 32. The particle of claim 7, wherein said capping groupscomprise trioctylphosphine oxide.
 33. The method of claim 9, whereinsaid adding comprises contacting said semiconductor nanocrystal with areducing agent, said reducing agent comprising sodium.
 34. The method ofclaim 33, wherein said reducing agent comprises sodium biphenyl.
 35. Themethod of claim 10, wherein said adding further comprises contactingsaid semiconductor nanocrystal with a charge shuttle.
 36. The method ofclaim 13, wherein said adding comprises contacting said semiconductornanocrystal with a reducing agent, said reducing agent comprisingsodium.
 37. The method of claim 36, wherein said reducing agentcomprises sodium biphenyl.